Point Defects, Line Defects, and Interfaces in
Plymouth State College, Plymouth, NH
chair; L. C. Feldman, vice-chair
31 July-5 August
Lattice Location of
J. Northrup, "Si Doping and Diffusion in GaAs."
"EXAFS and NEXAFS Studio of Point Defects in
Newman, "The Dynamics of H - Cas Pairs in GabAs and AIAs
Deduced From LVM
Advances in Structure Sensitive Techniques: W. Jantsch,
C. Corbel, "Position Annihilation Studies of Charge
Metastability of Defects in Semiconductors."
"Electrical Detection of Electron Paramogenetic
Resonance: New Possibilities
for the Study of Point Defects."
II-VI Semiconductors: Defects and
Devices: C. G. Van de Walle,
J. Chadi, "DX Centers in
B. K. Meyer, "ODMR of Defects in Cd Zn
Wide - Band - Gap Semiconductors
P. Boguslawski, "Impurities and
Defects in Wide Gap Nitrides."
Hydrogen in Semiconductors: J. Weber,
N. M. Johnson, "Diffusion and Charge States of Isolated
Hydrogen in Si
S. K. Estreicher, "States and Diffusion
Properties of Hydrogen in
Semiconductors: A View from Theory."
Cartier, "Interaction of Atomic H with the Si/Si O2
Dislocations: E. Weber, discussion leader
"Impurity - Dislocation Interaction in Si and GaAs."
B. Farber, "A New
Approach for Studying Kink Dynamics on Dislocations
Heteroepitaxy: E. Fitzgerald, discussion leader
Kavanagh, "Strain Relaxation of InGaAs/GaAs."
F. LeGoues, "Strain Relief in
SiGe on Si."
Diffusion: U. Gosele, discussion leader
N. Moriya, "B
Diffusion in SiGe Epitaxial Layers."
A. Nylandsted, "Enhanced Diffusion of
High Concentration Impurities in
Si: A Collective
Interfaces, Defects, and Epitaxy: M. Scheffler, discussion
B. Bennett, "Interfacial Characterization and Control in
H. J. Osten, "The Role of Foreign
Atoms in Epitaxy."
J. Tersoff, "Interactions of Defects with Surfaces and